, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 designer's data sheet power field effect transistor n-channel enhancement-mode silicon gate this tmos power fet is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ~~ switching times specified at 100c ? designer's data ? ipss- vds(on)< vgs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-drain diode characterized for use with inductive loads MTP15N05E tmos tmos power fet 15 amperes rds(on) - 0.1 ohm 50 volts maximum ratings rrtfatg drain-source voltage drain-gate voltage MTP15N05E electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol win max unit off characteristics dram-source breakdown voltage (vgs = 0, id = 0.25 ma) zero gate voltage drain current (vds = rated vdss- vgs = ) (vds = rated vdss- vgs = ". tj = 125c) gate-body leakage current, forward (vggp = 20 vdc, vd$ = 0) gate-body leakage current, reverse (vqsh = 20 vdc, vds = ' v(br)oss idss igssf 'gssr 50 - ? _ ? 10 100 100 100 vdc padc nadc nadc on characteristics* gate threshold voltage (vds = vgs, ]d = 1 ma) tj = 100c static drain-source on-resistance (vgs = 10 vdc, ifj = 7.5 adc) drain-source on-voltage (vgs = 10 v) (id - 15 adc) (id = 7 5 adc, tj = 100c) forward transconductance (vos = 15 v, id = 7.5 al vqs(th) rds(on) vds(on) 9fs 2 1 5 ? ? 3.5 4,5 4 0.1 2.9 2.4 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vos ~ 25 v' vgs ~ "? f = 1 mhz) see figure 1 1 ciss cdss crss ? ? ? 700 400 200 pf switching characteristics' (tj = 100'c) turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge (vdd = 25 v. id = 0.5 rated id see figures 9, 13 and 14 ivds ~ -8 rated vdss. id = rated id, vgs = 1"v' see figure 12 td(on) tr td(off) tf qq qgs gd ? - ? ? 17 (typ) 8 (typ) 9 (typ) 50 150 200 100 35 ? ? ns nc source drain diode characteristics* forward on-voltage forward turn-on time reverse recovery time (ig - rated id vgs = 0) vsd 'on vr 1.8 (typ) 2.5 vdc limited by stray inductance 320 (typ) ? ns internal package inductance internal drain inductance (measured from the contact screw on tab to center of die) (measured from the dram lead 0 25" from package to center of die) internal source inductance (measured from the source lead 0.25" from package to source bond pad ) ld ls 3,5 (typ) 4.5 (typ) 7.5 (typ) ? ? nh ?pulse test pulso width * 300 jus. duty cycle * 2%
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